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Samsung 9100 PRO/1TB/SSD/M.2 NVMe/Černá/Heatsink/5R
Samsung 9100 PRO/1TB/SSD/M.2 NVMe/Černá/Heatsink/5R
5188 Kč
4288 Kč bez DPH
Dostupnost: Skladem v eshopu 🛈
Part no.: MZ-VAP1T0CW
Kód produktu: 25495313
Výrobce: SAMSUNG
Váha: 0,03 kg
Záruka: 60 měsíců
Popis produktu
Kapacita 1000GB; formát M.2; čtecí rychlost až 14700 MB/sec; zapisovací rychlost až 13300 MB/s
Application Client PCs, Game Consoles
Capacity 1,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Form Factor M.2 (2280)
Interface PCIe® 5.0 x4, NVMe™ 2.0
Dimension (WxHxD) Max 80.15 x Max 25 x Max 8.88mm (with Heatsink)
Weight Max 30.0g Weight
Storage Memory Samsung V-NAND TLC
Controller Samsung in-house Controller
Cache Memory Samsung 1GB Low Power DDR4X SDRAM
TRIM Support Supported
S.M.A.R.T Support Supported
GC (Garbage Collection) Auto Garbage Collection Algorithm
Encryption Support AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
WWN Support Not supported
Device Sleep Mode Support Yes
Sequential Read Up to 14,700 MB/s * Performance may vary based on system hardware & configuration
Sequential Write Up to 13,300 MB/s * Performance may vary based on system hardware & configuration
Random Read Up to 1,850,000 IOPS * Performance may vary based on system hardware & configuration
Random Write Up to 2,600,000 IOPS * Performance may vary based on system hardware & configuration
Average Power Consumption (System Level) Average: Read 7.6 W / Write 7.2 W* Actual power consumption may vary depending on system hardware & configuration
Power Consumption (Idle) Typical 4 mW * Actual power consumption may vary depending on system hardware & configuration
Power Consumption (Device Sleep) Typical 3.3 mW * Actual power consumption may vary depending on system hardware & configuration
Allowable Voltage 3.3 V ± 5 % Allowable voltage
Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
Operating Temperature 0 - 70 ? Operating Temperature
Shock 1,500 G & 0.5 ms (Half sine)
Popis produktu
Samsung 9100 PRO with Heatsink 1000GBKapacita 1000GB; formát M.2; čtecí rychlost až 14700 MB/sec; zapisovací rychlost až 13300 MB/s
Application Client PCs, Game Consoles
Capacity 1,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Form Factor M.2 (2280)
Interface PCIe® 5.0 x4, NVMe™ 2.0
Dimension (WxHxD) Max 80.15 x Max 25 x Max 8.88mm (with Heatsink)
Weight Max 30.0g Weight
Storage Memory Samsung V-NAND TLC
Controller Samsung in-house Controller
Cache Memory Samsung 1GB Low Power DDR4X SDRAM
TRIM Support Supported
S.M.A.R.T Support Supported
GC (Garbage Collection) Auto Garbage Collection Algorithm
Encryption Support AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
WWN Support Not supported
Device Sleep Mode Support Yes
Sequential Read Up to 14,700 MB/s * Performance may vary based on system hardware & configuration
Sequential Write Up to 13,300 MB/s * Performance may vary based on system hardware & configuration
Random Read Up to 1,850,000 IOPS * Performance may vary based on system hardware & configuration
Random Write Up to 2,600,000 IOPS * Performance may vary based on system hardware & configuration
Average Power Consumption (System Level) Average: Read 7.6 W / Write 7.2 W* Actual power consumption may vary depending on system hardware & configuration
Power Consumption (Idle) Typical 4 mW * Actual power consumption may vary depending on system hardware & configuration
Power Consumption (Device Sleep) Typical 3.3 mW * Actual power consumption may vary depending on system hardware & configuration
Allowable Voltage 3.3 V ± 5 % Allowable voltage
Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
Operating Temperature 0 - 70 ? Operating Temperature
Shock 1,500 G & 0.5 ms (Half sine)
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