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GOODRAM PX500 256GB, SSDPR-PX500-256-80 GOODRAM SSD PX500 256GB M.2 2280, NVMe (R:1850/ W:950MB/s) Gen.2
GOODRAM PX500 256GB, SSDPR-PX500-256-80 GOODRAM SSD PX500 256GB M.2 2280, NVMe (R:1850/ W:950MB/s) Gen.2
702 Kč
580 Kč bez DPH
Dostupnost: Skladem v eshopu 🛈
Part no.: SSDPR-PX500-256-80-G2
Kód produktu: 23645843
Výrobce: GoodRAM
Záruka: 36 měsíců
Popis produktu
By providing up to 4x better sequential and random transfer performance compared to SATA III Solid State Drives and lower latency than AHCI drives, GOODRAM PX500 gen.2 pumps-up your PC. The performance will improve the work of more demanding customers, offering a reading of up to 2050MB/s. It is also perfect as a stand-alone drive, as well as an add-on to a hard disk in desktops and laptops. Available capacities for the PX500 gen.2 make the drive work in both roles.
high-speed PCIe gen 3 x4 interface
wsparcie NVMe 1.3
3D NAND flash technology
heat-dissipating thermal pad
TECHNICAL SPECIFICATIONS
PERFORMANCE
Sequential read performance (max.)
1 850 MB/s
Sequential write performance (max.)
950 MB/s
Random read performance (4k QD64) (max.)
102 000 IOPS
Random write performance (4K QD64) (max.)
230 000 IOPS
PHYSICAL PARAMETERS
Capacity
256 GB
Form Factor
80 x 22 x 3,5 mm
Interface
M.2 PCIe NVMe gen 3 x4 (M key)
NAND flash
3D NAND flash
Temperature
Operational: 0 - 70°C Storage: -45 - 85°C
More information on the manufacturer s website: https://www.goodram.com/cs/
Popis produktu
PX500 GEN.2 NVME PCIE GEN 3 X4 SSDBy providing up to 4x better sequential and random transfer performance compared to SATA III Solid State Drives and lower latency than AHCI drives, GOODRAM PX500 gen.2 pumps-up your PC. The performance will improve the work of more demanding customers, offering a reading of up to 2050MB/s. It is also perfect as a stand-alone drive, as well as an add-on to a hard disk in desktops and laptops. Available capacities for the PX500 gen.2 make the drive work in both roles.
high-speed PCIe gen 3 x4 interface
wsparcie NVMe 1.3
3D NAND flash technology
heat-dissipating thermal pad
TECHNICAL SPECIFICATIONS
PERFORMANCE
Sequential read performance (max.)
1 850 MB/s
Sequential write performance (max.)
950 MB/s
Random read performance (4k QD64) (max.)
102 000 IOPS
Random write performance (4K QD64) (max.)
230 000 IOPS
PHYSICAL PARAMETERS
Capacity
256 GB
Form Factor
80 x 22 x 3,5 mm
Interface
M.2 PCIe NVMe gen 3 x4 (M key)
NAND flash
3D NAND flash
Temperature
Operational: 0 - 70°C Storage: -45 - 85°C
More information on the manufacturer s website: https://www.goodram.com/cs/
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